Перегляд за автором "Tkachenko, V.F."

Результати 1-17 з 17

Effect of growth conditions on structure quality of KDP crystals

Salo, V.I.; Tkachenko, V.F.; Kolybayeva, M.I.; Pritula, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

The effect of different variable crystallization parameters (supersaturation, solution acidity, degree of the solution purity, hydrodynamic growth regime) on structural quality and optical homogeneity of KDP crystals grown ...
Effect of L-arginine on the optical properties, crystalline perfection and laser damage threshold of KDP crystals

Kostenyukova, E.I.; Bezkrovnaya, O.N.; Tkachenko, V.F.; Kolybaeva, M.I.; Sofronov, D.S.; Dolzhenkova, E.F.; Lopin, A.V.; Pritula, I.M. (Functional Materials, 2015)

Potassium dihydrogen phosphate (KDP) single crystals doped with L-arginine amino acid were grown from aqueous solutions onto a point seed using the temperature reduction method. The incorporation of L-arg molecules into ...
Effect of thallium impurity on the growth kinetics and perfection of KDP crystals

Voronov, A.P.; Puzikov, V.M.; Salo, V.I.; Tkachenko, V.F.; Babenko, G.N.; Gerasimenko, N.S.; Tsurikov, V.A. (Functional Materials, 2011)
Growing of thallium-doped KDP and ADP crystals: structural and optical parameters

Salo, V.I.; Tkachenko, V.F.; Voronov, A.P.; Puzikov, V.M.; Tsurikov, V.A. (Functional Materials, 2005)

Studied has been the influence of thallium activator on the growth kinetics and structure perfection of KDP and ADP crystals, the character of its incorporation and distribution in the crystal lattice and the photoluminescence ...
Investigation of damaged layer formed at mechanical treatment of sapphire using three-crystal X-ray diffraction method

Tkachenko, V.F.; Kryvonogov, S.I.; Budnikov, A.T.; Lukienko, O.A.; Vovk, E.A. (Functional Materials, 2014)

The methods of three-crystal X-ray diffractometry were used for investigating structure perfection in surface-adjacent damaged layer (DL) formed in the process of mechanical and chemical-mechanical treatment of sapphire ...
Optical properties and fine faulty structure of sapphire crystals grown in low pressure CO gas atmosphere

Puzikov, V.M.; Danko, A.Ya.; Adonkin, G.T.; Sidelnikova, N.S.; Tkachenko, V.F.; Budnikov, A.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

Presented in this paper are the results of the study of optical characteristics and fine faulty structure of big sapphire crystals grown in a CO-based low pressure (0.1...0.3 torr) gas atmosphere. Optimal conditions for ...
Peculiarities of optical and structure characteristics of sapphire single crystals grown in Ar + CO atmosphere

Dan’ko, A.Ya.; Tkachenko, V.F.; Sidelnikova, N.S.; Puzikov, V.M.; Nizhankovskiy, S.V. (Functional Materials, 2004)

Presented are the results of optical and X-ray structure investigations of sapphire crystals grown by the method of HOC in the protective (reducing) medium Ar+CO under a pressure of 10...800 torr. The dependence of the ...
Peculiarities of optical and structure characteristics of sapphire single crystals grown in Ar+CO atmosphere

Dan‘ko, A.Ya.; Tkachenko, V.F.; Sidelnikova, N.S.; Puzikov, V.M.; Nizhankovskiy, S.V. (Functional Materials, 2004)

Presented are the results of optical and X-ray structure investigations of sapphire crystals grown by the method of HOC in the protective (reducing) medium Ar+CO under a pressure of 10...800 torr. The dependence of the ...
Research of Structural Quality of Big-Size KDP Crystals

Salo, V.I.; Tkachenko, V.F.; Puzikov, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The faulted structure formation at a rapid growing of big-size KDP crystals has been analyzed. A transitional zone with high degree of lattice faultness has been revealed between the seed and the pure zone of the grown ...
Structure perfection of bulk and near-surface layers in sapphire single crystals

Tkachenko, V.F.; Puzikov, V.M.; Dan`ko, A.Ya.; Budnikov, A.T.; Lukienko, O.A. (Functional Materials, 2007)

Triple-crystal X-ray diffractometry has been used to study the structure perfection in bulk and surface layer of basal-oriented sapphire single crystals grown using horizontal directional crystallization (HDC) in reducing ...
Structure perfection of large-size KDP crystals grown by various techniques

Puzikov, V.M.; Tkachenko, V.F.; Tsurikov, V.A. (Functional Materials, 2008)

The structure perfection of large-size KDP single crystals grown from nominally pure raw material by recirculation and solution temperature lowering techniques has been studied using the precision three-crystal X-ray ...
Structure perfection of sapphire single crystals grown by HOC method in reducing atmosphere

Tkachenko, V.F.; Lukienko, O.A.; Budnikov, A.T.; Vovk, E.A.; Krivonogov, S.I. (Functional Materials, 2011)
Study of nature of some defects visible in polarized light in sapphire signle crystals

Tkachenko, V.F.; Dan`ko, A.Ya.; Puzikov, V.M.; Budnikov, A.T.; Lukienko, O.A.; Sidelnikova, N.S.; Adonkin, G.T. (Functional Materials, 2007)

Using the precision technique of triple-crystal X-ray diffractometry, the structure of defect parts has been studied in large-size sapphire crystals grown by the horizontal directed crystallization in reducing gas media. ...
Study of structure perfection of KDP single crystals using the X-ray dynamic diffraction effects

Puzikov, V.M.; Tkachenko, V.F.; Tsurikov, V.A. (Functional Materials, 2011)
Variation of crystal lattice parameters of KDP single crystals containing impurities

Salo, V.I.; Tkachenko, V.F. (Functional Materials, 2008)

KDP single crystals grown from aqueous solutions by the recirculation method from nominally "pure" raw material and added impurities Ca, Si, Pb, Cr, hydrogen peroxide were studied by high resolution X-ray method. It was ...
XRD method for the determination of internal stresses in KDP crystals and their relationship to the anomalous biaxiality

Puzikov, V.M.; Tkachenko, V.F.; Tsurikov, V.A. (Functional Materials, 2015)

Designed precision method for determining residual stresses in crystals of the KDP on the relative displacement of the rocking curves (RC), caused by the presence of tensile stress, compression from the {110} or {101}, ...
XRD studies of surface layers in sapphire substrates of <101Bar2> crystalloghaphic orientation

Tkachenko, V.F.; Lukienko, O.A.; Budnikov, A.T.; Vovk, E.A.; Krivonogov, S.I.; Dan`ko, A.Ya. (Functional Materials, 2011)

Результати 1-17 з 17

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Перегляд за автором "Tkachenko, V.F."

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